Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime

Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and essential for the manufacture of highly integrated devices. In CMP, pad conditioning using disk with diamond grit adopted to maintain surface roughness remove debris. However, uneven wear by unavoidable in CMP. this study, we propose contact-area-changeable system utilize it conduct preliminary study improving lifetime. Using conventional method (Case I), material removal rate (MRR) decreased rapidly after 12 h within-wafer non-uniformity (WIWNU) increased. results experiments show when system, uniform can be obtained wafer–pad contact area lifetime extended more than 20 h. Finally, newly proposed may improve CMP